Two-inch Fe-doped β-Ga<sub>2</sub>O<sub>3</sub> (010) substrates prepared using vertical Bridgman method

نویسندگان

چکیده

Abstract The growth of large-diameter high-resistivity β -Ga 2 O 3 (010) substrates is important for the low-cost production lateral Ga devices. We grew a inch diameter Fe-doped single crystal by using vertical Bridgman (VB) method, which expected to grow crystals with various orientations. Two-inch were prepared from obtained crystals, and their crystallinity, concentration Fe dopants, electrical properties investigated. Consequently, substrate, comparable largest size substrate Czochralski was successfully fabricated VB method. in-plane distribution X-ray rocking curve 020 diffraction showed that full widths at half maximums less than 35 arcsec almost all measurement points, indicating high crystallinity uniformity. In addition, contain concentrations in range 3.5 × 10 18 –1.9 19 cm −3 , impurity Si donors are sufficiently compensated dopants. Therefore, method exhibited resistivities 6 11 –9 12 Ω·cm room temperature.

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ژورنال

عنوان ژورنال: Japanese Journal of Applied Physics

سال: 2023

ISSN: ['0021-4922', '1347-4065']

DOI: https://doi.org/10.35848/1347-4065/acb55a